China 3-inch Gallium Antimonide Substrate
SMM-SC-JP-012USD/piece
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Commodity
Semi-conductor
Location
-
Definition
Ex-works, China
Quality
General enterprise standards(impurity element characteristic, conductivity type P, carrier concentration range(1-100)* 17 power, mobility 200-500, dislocation density within 10000, crystal orientation 100)
VAT Rate
Original price includes 13% VAT Rate
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China 3-inch Gallium Antimonide Substrate
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Jul 01, 2026
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